Publications
1.
Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael; Chen, Jian; Zhang, Xi-Cheng; Schleicher, James M.; Schmuttenmaer, Charles A.; Fernelius, Nils C.
III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors Journal Article
In: IEEE Journal of Selected Topics in Quantum Electronics, vol. 14, pp. 284 – 288, 2008.
@article{Mandal2008,
title = {III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors},
author = {Krishna C. Mandal and Sung Hoon Kang and Michael Choi and Jian Chen and Xi-Cheng Zhang and James M. Schleicher and Charles A. Schmuttenmaer and Nils C. Fernelius},
url = {http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=4481122},
year = {2008},
date = {2008-04-04},
journal = {IEEE Journal of Selected Topics in Quantum Electronics},
volume = {14},
pages = {284 - 288},
abstract = {The layered chalcogenide semiconductor GaSe has been grown under various crystal growth conditions for optimum performance for tunable terahertz (THz) wave generation and broadband THz detection. Low-temperature photoluminescence (PL), Raman spectroscopy, optical absorption/transmission, electrical charge transport property measurements, and THz time-domain spectroscopy (TDS) have been used to characterize the grown crystals. It is observed that indium doping enhances hardness of the grown GaSe crystals, which is very useful for processing and fabricating large-area devices. GaSe crystals have demonstrated promising characteristics with good optical quality (absorption coefficient les0.1 cm-1 in the spectral range of 0.62-18 mum), high dark resistivity (ges109 Omega cm), wide bandgap (2.01 eV at 300 K), good anisotropic (parand perp) electrical transport properties (mue/h, taue/h, and mutaue/h) and long-term stability. The THz emission measurements have shown that the GaSe crystals are highly efficient for broadband tunable THz sources (up to 40 THz), and sensors (up to 100 THz). Additionally, new THz frequencies (0.1-3 THz) have been observed for the first time from an anisotropic binary and a ternary semiconductor crystal. Details of characterizations as well as optimum crystal growth conditions including simulation and computer modeling are described in this paper.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The layered chalcogenide semiconductor GaSe has been grown under various crystal growth conditions for optimum performance for tunable terahertz (THz) wave generation and broadband THz detection. Low-temperature photoluminescence (PL), Raman spectroscopy, optical absorption/transmission, electrical charge transport property measurements, and THz time-domain spectroscopy (TDS) have been used to characterize the grown crystals. It is observed that indium doping enhances hardness of the grown GaSe crystals, which is very useful for processing and fabricating large-area devices. GaSe crystals have demonstrated promising characteristics with good optical quality (absorption coefficient les0.1 cm-1 in the spectral range of 0.62-18 mum), high dark resistivity (ges109 Omega cm), wide bandgap (2.01 eV at 300 K), good anisotropic (parand perp) electrical transport properties (mue/h, taue/h, and mutaue/h) and long-term stability. The THz emission measurements have shown that the GaSe crystals are highly efficient for broadband tunable THz sources (up to 40 THz), and sensors (up to 100 THz). Additionally, new THz frequencies (0.1-3 THz) have been observed for the first time from an anisotropic binary and a ternary semiconductor crystal. Details of characterizations as well as optimum crystal growth conditions including simulation and computer modeling are described in this paper.
Note: Send e-mail to Prof. Kang at [email protected] if you need a pdf file of the papers below.
2008
Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael; Chen, Jian; Zhang, Xi-Cheng; Schleicher, James M.; Schmuttenmaer, Charles A.; Fernelius, Nils C.
III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors Journal Article
In: IEEE Journal of Selected Topics in Quantum Electronics, vol. 14, pp. 284 – 288, 2008.
Abstract | Links | BibTeX | Tags: Broadband, Chalcogenide, Crystal, III-VI, Semiconductor, Sensor, Source, THz, Tunable
@article{Mandal2008,
title = {III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors},
author = {Krishna C. Mandal and Sung Hoon Kang and Michael Choi and Jian Chen and Xi-Cheng Zhang and James M. Schleicher and Charles A. Schmuttenmaer and Nils C. Fernelius},
url = {http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=4481122},
year = {2008},
date = {2008-04-04},
journal = {IEEE Journal of Selected Topics in Quantum Electronics},
volume = {14},
pages = {284 - 288},
abstract = {The layered chalcogenide semiconductor GaSe has been grown under various crystal growth conditions for optimum performance for tunable terahertz (THz) wave generation and broadband THz detection. Low-temperature photoluminescence (PL), Raman spectroscopy, optical absorption/transmission, electrical charge transport property measurements, and THz time-domain spectroscopy (TDS) have been used to characterize the grown crystals. It is observed that indium doping enhances hardness of the grown GaSe crystals, which is very useful for processing and fabricating large-area devices. GaSe crystals have demonstrated promising characteristics with good optical quality (absorption coefficient les0.1 cm-1 in the spectral range of 0.62-18 mum), high dark resistivity (ges109 Omega cm), wide bandgap (2.01 eV at 300 K), good anisotropic (parand perp) electrical transport properties (mue/h, taue/h, and mutaue/h) and long-term stability. The THz emission measurements have shown that the GaSe crystals are highly efficient for broadband tunable THz sources (up to 40 THz), and sensors (up to 100 THz). Additionally, new THz frequencies (0.1-3 THz) have been observed for the first time from an anisotropic binary and a ternary semiconductor crystal. Details of characterizations as well as optimum crystal growth conditions including simulation and computer modeling are described in this paper.},
keywords = {Broadband, Chalcogenide, Crystal, III-VI, Semiconductor, Sensor, Source, THz, Tunable},
pubstate = {published},
tppubtype = {article}
}
The layered chalcogenide semiconductor GaSe has been grown under various crystal growth conditions for optimum performance for tunable terahertz (THz) wave generation and broadband THz detection. Low-temperature photoluminescence (PL), Raman spectroscopy, optical absorption/transmission, electrical charge transport property measurements, and THz time-domain spectroscopy (TDS) have been used to characterize the grown crystals. It is observed that indium doping enhances hardness of the grown GaSe crystals, which is very useful for processing and fabricating large-area devices. GaSe crystals have demonstrated promising characteristics with good optical quality (absorption coefficient les0.1 cm-1 in the spectral range of 0.62-18 mum), high dark resistivity (ges109 Omega cm), wide bandgap (2.01 eV at 300 K), good anisotropic (parand perp) electrical transport properties (mue/h, taue/h, and mutaue/h) and long-term stability. The THz emission measurements have shown that the GaSe crystals are highly efficient for broadband tunable THz sources (up to 40 THz), and sensors (up to 100 THz). Additionally, new THz frequencies (0.1-3 THz) have been observed for the first time from an anisotropic binary and a ternary semiconductor crystal. Details of characterizations as well as optimum crystal growth conditions including simulation and computer modeling are described in this paper.