Publications
1.
Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael; Kargar, Alireza; Harrison, Mark J.; McGregor, Douglas S.; Bolotnikov, Aleksey E.; Carini, Gabriella A.; Giuseppe C. Camarda,; James, Ralph B.
Characterization of Low-Defect Cd0.9Zn0.1Te and CdTe Crystals for High-Performance Frisch Collar Detectors Journal Article
In: IEEE Transactions on Nuclear Science, vol. 54, pp. 802 – 806 , 2007.
@article{Mandal2007,
title = {Characterization of Low-Defect Cd0.9Zn0.1Te and CdTe Crystals for High-Performance Frisch Collar Detectors},
author = {Krishna C. Mandal and Sung Hoon Kang and Michael Choi and Alireza Kargar and Mark J. Harrison and Douglas S. McGregor and Aleksey E. Bolotnikov and Gabriella A. Carini and Giuseppe C. Camarda, and Ralph B. James},
url = {http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4291754&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4291754},
year = {2007},
date = {2007-08-20},
journal = {IEEE Transactions on Nuclear Science},
volume = {54},
pages = {802 - 806 },
abstract = {Low dislocation density, high-purity, and low inclusion concentration Cd0.9Zn0.1Te (CZT) and CdTe crystals were grown by a vertical Bridgman technique using in-house zone refined precursors. The grown crystals were sequentially processed using optimized chemo-mechanical processes to fabricate planar and Frisch collar detectors. Infrared transmission and scanning electron microscopy studies have shown that EIC grown CZT and CdTe crystals have significantly lower Te inclusions and defect densities than commercially available spectrometer grade crystals. The charge transport properties (electron and hole mobility-lifetime products, mutaue & mutauh) of various detectors have been evaluated by Hecht analysis. The detectors have been tested for spectral response using 59.5 and 662 keV gamma-ray sources. The CZT detectors with planar electrodes showed 2.6% FWHM at 662 keV. By adding a Frisch collar, the detectors' spectra improved significantly. The Frisch collar detectors proved to be very promising for assembling large-area arrays with excellent energy resolution at relatively low manufacturing cost.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Low dislocation density, high-purity, and low inclusion concentration Cd0.9Zn0.1Te (CZT) and CdTe crystals were grown by a vertical Bridgman technique using in-house zone refined precursors. The grown crystals were sequentially processed using optimized chemo-mechanical processes to fabricate planar and Frisch collar detectors. Infrared transmission and scanning electron microscopy studies have shown that EIC grown CZT and CdTe crystals have significantly lower Te inclusions and defect densities than commercially available spectrometer grade crystals. The charge transport properties (electron and hole mobility-lifetime products, mutaue & mutauh) of various detectors have been evaluated by Hecht analysis. The detectors have been tested for spectral response using 59.5 and 662 keV gamma-ray sources. The CZT detectors with planar electrodes showed 2.6% FWHM at 662 keV. By adding a Frisch collar, the detectors’ spectra improved significantly. The Frisch collar detectors proved to be very promising for assembling large-area arrays with excellent energy resolution at relatively low manufacturing cost.
2.
Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael; Wei, Jiuan; Zheng, Lili; Zhang, Hui; Jellison, Gerald E.; Groza, Michael; Burger, Arnold
Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors Journal Article
In: Journal of Electronic Materials, vol. 36, pp. 1013-1020, 2007.
@article{Mandal2007b,
title = {Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors},
author = {Krishna C. Mandal and Sung Hoon Kang and Michael Choi and Jiuan Wei and Lili Zheng and Hui Zhang and Gerald E. Jellison and Michael Groza and Arnold Burger },
url = {http://link.springer.com/article/10.1007%2Fs11664-007-0164-y},
year = {2007},
date = {2007-07-06},
journal = {Journal of Electronic Materials},
volume = {36},
pages = {1013-1020},
abstract = {Spectrometer-grade CdTe single crystals with resistivities higher than 109 Ω cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties (μτ e = 2 × 10−3 cm2 V−1, μτ h = 8 × 10−5 cm2 V−1) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55′′), 38 mm (1.5′′), and 76 mm (3′′). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using 241Am (60 keV) and 137Cs (662 keV) sources are presented.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Spectrometer-grade CdTe single crystals with resistivities higher than 109 Ω cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties (μτ e = 2 × 10−3 cm2 V−1, μτ h = 8 × 10−5 cm2 V−1) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55′′), 38 mm (1.5′′), and 76 mm (3′′). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using 241Am (60 keV) and 137Cs (662 keV) sources are presented.
Note: Send e-mail to Prof. Kang at [email protected] if you need a pdf file of the papers below.
2007
Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael; Kargar, Alireza; Harrison, Mark J.; McGregor, Douglas S.; Bolotnikov, Aleksey E.; Carini, Gabriella A.; Giuseppe C. Camarda,; James, Ralph B.
Characterization of Low-Defect Cd0.9Zn0.1Te and CdTe Crystals for High-Performance Frisch Collar Detectors Journal Article
In: IEEE Transactions on Nuclear Science, vol. 54, pp. 802 – 806 , 2007.
Abstract | Links | BibTeX | Tags: CdTe, Characterization, Crystal, CZT, Detector
@article{Mandal2007,
title = {Characterization of Low-Defect Cd0.9Zn0.1Te and CdTe Crystals for High-Performance Frisch Collar Detectors},
author = {Krishna C. Mandal and Sung Hoon Kang and Michael Choi and Alireza Kargar and Mark J. Harrison and Douglas S. McGregor and Aleksey E. Bolotnikov and Gabriella A. Carini and Giuseppe C. Camarda, and Ralph B. James},
url = {http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4291754&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D4291754},
year = {2007},
date = {2007-08-20},
journal = {IEEE Transactions on Nuclear Science},
volume = {54},
pages = {802 - 806 },
abstract = {Low dislocation density, high-purity, and low inclusion concentration Cd0.9Zn0.1Te (CZT) and CdTe crystals were grown by a vertical Bridgman technique using in-house zone refined precursors. The grown crystals were sequentially processed using optimized chemo-mechanical processes to fabricate planar and Frisch collar detectors. Infrared transmission and scanning electron microscopy studies have shown that EIC grown CZT and CdTe crystals have significantly lower Te inclusions and defect densities than commercially available spectrometer grade crystals. The charge transport properties (electron and hole mobility-lifetime products, mutaue & mutauh) of various detectors have been evaluated by Hecht analysis. The detectors have been tested for spectral response using 59.5 and 662 keV gamma-ray sources. The CZT detectors with planar electrodes showed 2.6% FWHM at 662 keV. By adding a Frisch collar, the detectors' spectra improved significantly. The Frisch collar detectors proved to be very promising for assembling large-area arrays with excellent energy resolution at relatively low manufacturing cost.},
keywords = {CdTe, Characterization, Crystal, CZT, Detector},
pubstate = {published},
tppubtype = {article}
}
Low dislocation density, high-purity, and low inclusion concentration Cd0.9Zn0.1Te (CZT) and CdTe crystals were grown by a vertical Bridgman technique using in-house zone refined precursors. The grown crystals were sequentially processed using optimized chemo-mechanical processes to fabricate planar and Frisch collar detectors. Infrared transmission and scanning electron microscopy studies have shown that EIC grown CZT and CdTe crystals have significantly lower Te inclusions and defect densities than commercially available spectrometer grade crystals. The charge transport properties (electron and hole mobility-lifetime products, mutaue & mutauh) of various detectors have been evaluated by Hecht analysis. The detectors have been tested for spectral response using 59.5 and 662 keV gamma-ray sources. The CZT detectors with planar electrodes showed 2.6% FWHM at 662 keV. By adding a Frisch collar, the detectors’ spectra improved significantly. The Frisch collar detectors proved to be very promising for assembling large-area arrays with excellent energy resolution at relatively low manufacturing cost.
Mandal, Krishna C.; Kang, Sung Hoon; Choi, Michael; Wei, Jiuan; Zheng, Lili; Zhang, Hui; Jellison, Gerald E.; Groza, Michael; Burger, Arnold
Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors Journal Article
In: Journal of Electronic Materials, vol. 36, pp. 1013-1020, 2007.
Abstract | Links | BibTeX | Tags: CdTe, Characterization, Crystal, Detector, Growth
@article{Mandal2007b,
title = {Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors},
author = {Krishna C. Mandal and Sung Hoon Kang and Michael Choi and Jiuan Wei and Lili Zheng and Hui Zhang and Gerald E. Jellison and Michael Groza and Arnold Burger },
url = {http://link.springer.com/article/10.1007%2Fs11664-007-0164-y},
year = {2007},
date = {2007-07-06},
journal = {Journal of Electronic Materials},
volume = {36},
pages = {1013-1020},
abstract = {Spectrometer-grade CdTe single crystals with resistivities higher than 109 Ω cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties (μτ e = 2 × 10−3 cm2 V−1, μτ h = 8 × 10−5 cm2 V−1) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55′′), 38 mm (1.5′′), and 76 mm (3′′). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using 241Am (60 keV) and 137Cs (662 keV) sources are presented.},
keywords = {CdTe, Characterization, Crystal, Detector, Growth},
pubstate = {published},
tppubtype = {article}
}
Spectrometer-grade CdTe single crystals with resistivities higher than 109 Ω cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties (μτ e = 2 × 10−3 cm2 V−1, μτ h = 8 × 10−5 cm2 V−1) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55′′), 38 mm (1.5′′), and 76 mm (3′′). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using 241Am (60 keV) and 137Cs (662 keV) sources are presented.